| PART |
Description |
Maker |
| PBRN123Y PBRN123YK PBRN123YS PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 10 k?
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k??
|
NXP Semiconductors
|
| PBSS2540M PBSS2540M315 |
40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| PBSS4580PA PBSS4580PA-15 |
80 V, 5.6 A NPN low V_CEsat (BISS) transistor 5600 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
80 V, 5.6 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBRP113ET |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 1 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 1 kW
|
NXP Semiconductors
|
| MJ16018 MJW16018 ON1986 |
Power 10A 800V NPN
From old datasheet system
NPN Silicon Power Transistors
POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Mobility Holdings, Inc.
|
| PBSS4160DS |
60 V 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
Philips Semiconductors
|
| PBSS4260PAN |
NPN/NPN low VCEsat (BISS) transistor
|
NXP
|
| PBSS5130T |
30 V; 1 A PNP low VCEsat (BISS) transistor 30伏，1PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS4021NZ |
20 V, 8 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS2515MB |
15 V, 0.5 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS2515E |
0.5A NPN low VCEsat (BISS) transistor
|
NXP
|
| PBSS4560PA |
6A NPN Low V_CEsat (BISS) Transistor
|
NXP
|
